FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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2N7635-GA
Part Number：
2N7635-GA
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
TRANS SJT 650V 4A TO257
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Drain to Source Voltage (Vdss) 650 V
- Technology SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package TO-257
- Package / Case TO-257-3
- Power Dissipation (Max) 47W (Tc)
- Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C)
- Rds On (Max) @ Id, Vgs 415mOhm @ 4A
- Input Capacitance (Ciss) (Max) @ Vds 324 pF @ 35 V
- Operating Temperature -55°C ~ 225°C (TJ)
