FQB27N25TM-F085
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2SJ681(Q)
Part Number：
2SJ681(Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET P-CH 60V 5A PW-MOLD2
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Vgs (Max) ±20V
- FET Type P-Channel
- Vgs(th) (Max) @ Id 2V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Current - Continuous Drain (Id) @ 25°C 5A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Package / Case TO-251-3 Stub Leads, IPAK
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 10 V
- Supplier Device Package PW-MOLD2
- Power Dissipation (Max) 20W (Ta)
- Rds On (Max) @ Id, Vgs 170mOhm @ 2.5A, 10V
