FQB27N25TM-F085
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2SK1119(F)
Part Number：
2SK1119(F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 1000V 4A TO220AB
Packaging：
Tube
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 1000 V
- Vgs(th) (Max) @ Id 3.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Power Dissipation (Max) 100W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Rds On (Max) @ Id, Vgs 3.8Ohm @ 2A, 10V
