FQB27N25TM-F085
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2SK2883(TE24L,Q)
Part Number：
2SK2883(TE24L,Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 800V 3A TO220SM
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
- Power Dissipation (Max) 75W (Tc)
- Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.5A, 10V
- Supplier Device Package TO-220SM
