FQB27N25TM-F085
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2SK3128(Q)
Part Number：
2SK3128(Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 30V 60A TO3P
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Drain to Source Voltage (Vdss) 30 V
- Power Dissipation (Max) 150W (Tc)
- Package / Case TO-3P-3, SC-65-3
- Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 60A (Ta)
- Supplier Device Package TO-3P(N)
- Vgs(th) (Max) @ Id 3V @ 1mA
- Rds On (Max) @ Id, Vgs 12mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 10 V
