FQB27N25TM-F085
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2SK3132(Q)
Part Number：
2SK3132(Q)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 500V 50A TO3P
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 50A (Ta)
- Power Dissipation (Max) 250W (Tc)
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V
- Supplier Device Package TO-3P(L)
- Package / Case TO-3PL
- Rds On (Max) @ Id, Vgs 95mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 3.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 10 V
