FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
2SK3662(F)
Part Number：
2SK3662(F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 60V 35A TO220NIS
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) @ 25°C 35A (Ta)
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Package / Case TO-220-3 Full Pack
- Supplier Device Package TO-220NIS
- Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V
- Power Dissipation (Max) 35W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Rds On (Max) @ Id, Vgs 12.5mOhm @ 18A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 10 V
