FQB27N25TM-F085
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2SK3700(F)
Part Number：
2SK3700(F)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 900V 5A TO3P
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Power Dissipation (Max) 150W (Tc)
- Package / Case TO-3P-3, SC-65-3
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
- Drain to Source Voltage (Vdss) 900 V
- Current - Continuous Drain (Id) @ 25°C 5A (Ta)
- Supplier Device Package TO-3P(N)
- Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
