FQB27N25TM-F085
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APTC90DAM60T1G
Part Number：
APTC90DAM60T1G
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 900V 59A SP1
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Drain to Source Voltage (Vdss) 900 V
- Current - Continuous Drain (Id) @ 25°C 59A (Tc)
- Package / Case SP1
- Supplier Device Package SP1
- Rds On (Max) @ Id, Vgs 60mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 100 V
- Power Dissipation (Max) 462W (Tc)
