FQB27N25TM-F085
Sanyo Semiconductor/onsemi
APTM120DA56T1G
Part Number：
APTM120DA56T1G
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 1200V 18A SP1
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
- Drain to Source Voltage (Vdss) 1200 V
- Vgs(th) (Max) @ Id 5V @ 2.5mA
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Power Dissipation (Max) 390W (Tc)
- Package / Case SP1
- Supplier Device Package SP1
- Rds On (Max) @ Id, Vgs 672mOhm @ 14A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 7736 pF @ 25 V
