FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Surface Mount
- Grade Automotive
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 30 V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package LFPAK56, Power-SO8
- Package / Case SC-100, SOT-669
- Power Dissipation (Max) 59W (Tc)
- Rds On (Max) @ Id, Vgs 20mOhm @ 20A, 10V
- Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 39.5A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 688 pF @ 25 V
