FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Surface Mount
- Grade Automotive
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drain to Source Voltage (Vdss) 100 V
- Vgs(th) (Max) @ Id 2.1V @ 1mA
- Vgs (Max) ±10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package D2PAK
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Power Dissipation (Max) 357W (Tc)
- Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 5V
- Gate Charge (Qg) (Max) @ Vgs 133 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 17460 pF @ 25 V
