FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Through Hole
- Grade Automotive
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 55 V
- Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 25 V
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Power Dissipation (Max) 300W (Tc)
- Vgs(th) (Max) @ Id 2V @ 1mA
- Vgs (Max) ±15V
- Supplier Device Package I2PAK
- Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V
