FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
CSD25304W1015
Part Number：
CSD25304W1015
Category：
Single FETs, MOSFETs
Manufacturer：
Texas Instruments
Description：
MOSFET P-CH 20V 3A 6DSBGA
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Vgs (Max) ±8V
- Supplier Device Package 6-DSBGA (1x1.5)
- Package / Case 6-UFBGA, DSBGA
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Power Dissipation (Max) 750mW (Ta)
- Vgs(th) (Max) @ Id 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 595 pF @ 10 V
- Rds On (Max) @ Id, Vgs 32.5mOhm @ 1.5A, 4.5V
