FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 125°C (TJ)
- Package / Case Die
- Supplier Device Package Die
- FET Type N-Channel
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 5 V
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 200 V
- Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
- Vgs (Max) +6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds 145 pF @ 100 V
