FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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FDP86363-F085
Part Number：
FDP86363-F085
Category：
Single FETs, MOSFETs
Manufacturer：
Sanyo Semiconductor/onsemi
Description：
MOSFET N-CH 80V 110A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Grade Automotive
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 175°C (TJ)
- Qualification AEC-Q101
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220-3
- Drain to Source Voltage (Vdss) 80 V
- Power Dissipation (Max) 300W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 40 V
