FQB27N25TM-F085
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IPD80R2K8CEBTMA1
Part Number：
IPD80R2K8CEBTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 800V 1.9A TO252-3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Drain to Source Voltage (Vdss) 800 V
- Supplier Device Package PG-TO252-3-11
- Power Dissipation (Max) 42W (Tc)
- Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
- Vgs(th) (Max) @ Id 3.9V @ 120µA
- Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
- Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V
