FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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IPI020N06NAKSA1
Part Number：
IPI020N06NAKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 60V 29A/120A TO262
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 60 V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 175°C (TJ)
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package PG-TO262-3-1
- Power Dissipation (Max) 3W (Ta), 214W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
- Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id 2.8V @ 143µA
- Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C 29A (Ta), 120A (Tc)
