FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
IPP029N06NAKSA1
Part Number：
IPP029N06NAKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 60V 24A/100A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Drain to Source Voltage (Vdss) 60 V
- Vgs (Max) ±20V
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 175°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
- Supplier Device Package PG-TO220-3
- Power Dissipation (Max) 3W (Ta), 136W (Tc)
- Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id 2.8V @ 75µA
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V
