FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
IPP50R190CEXKSA1
Part Number：
IPP50R190CEXKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 500V 18.5A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 500 V
- Supplier Device Package PG-TO220-3
- Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 13V
- Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
- Vgs(th) (Max) @ Id 3.5V @ 510µA
- Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
- Power Dissipation (Max) 127W (Tc)
