FQB27N25TM-F085
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IPP65R099C6XKSA1
Part Number：
IPP65R099C6XKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 650V 38A TO220-3
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 278W (Tc)
- Supplier Device Package PG-TO220-3
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 38A (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 1.2mA
- Rds On (Max) @ Id, Vgs 99mOhm @ 12.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 100 V
