FQB27N25TM-F085
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IPU50R1K4CEBKMA1
Part Number：
IPU50R1K4CEBKMA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 500V 3.1A TO251-3
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package PG-TO251-3
- Drain to Source Voltage (Vdss) 500 V
- Power Dissipation (Max) 25W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 13V
- Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 70µA
- Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V
- Input Capacitance (Ciss) (Max) @ Vds 178 pF @ 100 V
