FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
IPU60R2K0C6BKMA1
Part Number：
IPU60R2K0C6BKMA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 600V 2.4A TO251-3
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package PG-TO251-3
- Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
- Rds On (Max) @ Id, Vgs 2Ohm @ 760mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
- Power Dissipation (Max) 22.3W (Tc)
