FQB27N25TM-F085
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IRFD213
Part Number：
IRFD213
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 250V 450MA 4DIP
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 250 V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package 4-HVMDIP
- Package / Case 4-DIP (0.300", 7.62mm)
- Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 450mA (Ta)
- Rds On (Max) @ Id, Vgs 2Ohm @ 270mA, 10V
