FQB27N25TM-F085
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IXFX32N100Q3
Part Number：
IXFX32N100Q3
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 1000V 32A PLUS247-3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Power Dissipation (Max) 1250W (Tc)
- Drain to Source Voltage (Vdss) 1000 V
- Supplier Device Package PLUS247™-3
- Package / Case TO-247-3 Variant
- Current - Continuous Drain (Id) @ 25°C 32A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
- Vgs(th) (Max) @ Id 6.5V @ 8mA
- Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 9940 pF @ 25 V
