English
中文
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
网易111
Sitemap
English
中文
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
IXGX82N120B3
IXGX82N120B3
Part Number:
IXGX82N120B3
Category:
Single IGBTs
Manufacturer:
Littelfuse / IXYS RF
Description:
IGBT 1200V 230A 1250W PLUS247
Packaging:
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
Add to RFQ
Specifications
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
1200 V
Input Type
Standard
IGBT Type
PT
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Power - Max
1250 W
Gate Charge
350 nC
Current - Collector (Ic) (Max)
230 A
Td (on/off) @ 25°C
30ns/210ns
Current - Collector Pulsed (Icm)
500 A
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 82A
Switching Energy
5mJ (on), 3.3mJ (off)
Test Condition
600V, 80A, 2Ohm, 15V
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
0755-83211465
396666147@qq.com
Add to RFQ
Back to top