FQB27N25TM-F085
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IXTA08N100D2
Part Number：
IXTA08N100D2
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 1000V 800MA TO263
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 1000 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 60W (Tc)
- Supplier Device Package TO-263AA
- FET Feature Depletion Mode
- Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
- Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V
- Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V
