FQB27N25TM-F085
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IXTA26P10T
Part Number：
IXTA26P10T
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET P-CH 100V 26A TO263
Packaging：
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Power Dissipation (Max) 150W (Tc)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vgs (Max) ±15V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
- Supplier Device Package TO-263AA
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3820 pF @ 25 V
- Rds On (Max) @ Id, Vgs 90mOhm @ 13A, 10V
