FQB27N25TM-F085
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IXTP6N100D2
Part Number：
IXTP6N100D2
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 1000V 6A TO220AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 1000 V
- Supplier Device Package TO-220-3
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- FET Feature Depletion Mode
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
