FQB27N25TM-F085
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IXTU2N80P
Part Number：
IXTU2N80P
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 800V 2A TO251
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Drain to Source Voltage (Vdss) 800 V
- Power Dissipation (Max) 70W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V
- Vgs(th) (Max) @ Id 5.5V @ 50µA
- Supplier Device Package TO-251AA
- Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
- Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V
