English
中文
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
网易111
Sitemap
English
中文
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
IXYT30N65C3H1HV
IXYT30N65C3H1HV
Part Number:
IXYT30N65C3H1HV
Category:
Single IGBTs
Manufacturer:
Littelfuse / IXYS RF
Description:
IGBT PT 650V 60A TO268AA
Packaging:
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Documents
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Input Type
Standard
IGBT Type
PT
Power - Max
270 W
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
60 A
Reverse Recovery Time (trr)
120 ns
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package
TO-268AA
Test Condition
400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 30A
Gate Charge
44 nC
Current - Collector Pulsed (Icm)
118 A
Switching Energy
1mJ (on), 270µJ (off)
Td (on/off) @ 25°C
21ns/75ns
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
0755-83211465
396666147@qq.com
Add to RFQ
Back to top