NDD01N60-1G

NDD01N60-1G

Part Number: NDD01N60-1G
Category: Single FETs, MOSFETs
Manufacturer: Sanyo Semiconductor/onsemi
Description: MOSFET N-CH 600V 1.5A IPAK
Packaging: -
ROHS Status: -
Currency: USD

Specifications

  • Mounting Type Through Hole
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Vgs (Max) ±30V
  • Drain to Source Voltage (Vdss) 600 V
  • Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package IPAK
  • Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V
  • Power Dissipation (Max) 46W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
  • Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
  • Vgs(th) (Max) @ Id 3.7V @ 50µA
  • Rds On (Max) @ Id, Vgs 8.5Ohm @ 200mA, 10V