FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package TO-236AB
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
- Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V
- Gate Charge (Qg) (Max) @ Vgs 0.43 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 17 pF @ 10 V
- Power Dissipation (Max) 265mW (Ta), 1.33W (Tc)
