FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package 8-SO
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 30 V
- Vgs(th) (Max) @ Id 2.15V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 20.3A (Tc)
- Power Dissipation (Max) 6.25W (Tc)
- Rds On (Max) @ Id, Vgs 8.9mOhm @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 12 V
