FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- Supplier Device Package 6-TSOP
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Package / Case SC-74, SOT-457
- Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V
- Rds On (Max) @ Id, Vgs 102mOhm @ 2.5A, 4.5V
- Power Dissipation (Max) 385mW (Ta)
