FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Technical Support Cluster Technology
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Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 30 V
- Package / Case 6-UDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
- Supplier Device Package DFN2020MD-6
- Rds On (Max) @ Id, Vgs 50mOhm @ 4.7A, 10V
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 15 V
- Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
