FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package TO-236AB
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 24 pF @ 10 V
- Rds On (Max) @ Id, Vgs 66mOhm @ 3.2A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 15.7 nC @ 4.5 V
