FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 30 V
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Supplier Device Package DFN1006B-3
- Package / Case 3-XFDFN
- Vgs(th) (Max) @ Id 1.05V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 900mA (Ta)
- Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 78 pF @ 25 V
- Rds On (Max) @ Id, Vgs 490mOhm @ 500mA, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 1.16 nC @ 15 V
