FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Drain to Source Voltage (Vdss) 200 V
- Supplier Device Package LFPAK56, Power-SO8
- Package / Case SC-100, SOT-669
- Power Dissipation (Max) 113W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 30.7 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
- Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1568 pF @ 30 V
