FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 175°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 130A (Tc)
- Power Dissipation (Max) 263W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 25A, 10V
