FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
RJK2009DPM-00#T0
Part Number：
RJK2009DPM-00#T0
Category：
Single FETs, MOSFETs
Manufacturer：
Intersil (Renesas Electronics Corporation)
Description：
MOSFET N-CH 200V 40A TO3PFM
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 200 V
- Power Dissipation (Max) 60W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 40A (Ta)
- Rds On (Max) @ Id, Vgs 36mOhm @ 20A, 10V
- Supplier Device Package TO-3PFM
