FQB27N25TM-F085
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RJK6032DPH-E0#T2
Part Number：
RJK6032DPH-E0#T2
Category：
Single FETs, MOSFETs
Manufacturer：
Intersil (Renesas Electronics Corporation)
Description：
MOSFET N-CH 600V 3A TO251
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
- Power Dissipation (Max) 40.3W (Tc)
- Supplier Device Package TO-251
- Rds On (Max) @ Id, Vgs 4.3Ohm @ 1.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 285 pF @ 25 V
