FQB27N25TM-F085
Sanyo Semiconductor/onsemi
SCT2120AFC
Part Number：
SCT2120AFC
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
SICFET N-CH 650V 29A TO220AB
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature 175°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Vgs(th) (Max) @ Id 4V @ 3.3mA
- Technology SiCFET (Silicon Carbide)
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 500 V
- Vgs (Max) +22V, -6V
- Power Dissipation (Max) 165W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
- Rds On (Max) @ Id, Vgs 156mOhm @ 10A, 18V
