FQB27N25TM-F085
Sanyo Semiconductor/onsemi
SCT2280KEC
Part Number：
SCT2280KEC
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
SICFET N-CH 1200V 14A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Operating Temperature 175°C (TJ)
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247
- Current - Continuous Drain (Id) @ 25°C 14A (Tc)
- Power Dissipation (Max) 108W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 18 V
- Vgs (Max) +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 800 V
