FQB27N25TM-F085
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SI7157DP-T1-GE3
Part Number：
SI7157DP-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET P-CH 20V 60A PPAK SO-8
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Supplier Device Package PowerPAK® SO-8
- Package / Case PowerPAK® SO-8
- Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
- Vgs(th) (Max) @ Id 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 625 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 22000 pF @ 10 V
