FQB27N25TM-F085
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SI8806DB-T2-E1
Part Number：
SI8806DB-T2-E1
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 12V 4MICROFOOT
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 12 V
- Vgs (Max) ±8V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Power Dissipation (Max) 500mW (Ta)
- Supplier Device Package 4-Microfoot
- Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
- Package / Case 4-XFBGA
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
- Rds On (Max) @ Id, Vgs 43mOhm @ 1A, 4.5V
