FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
SI8851EDB-T2-E1
Part Number：
SI8851EDB-T2-E1
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET P-CH 20V PWR MICRO FOOT
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 7.7A (Ta)
- Power Dissipation (Max) 660mW (Ta)
- Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 10 V
- Rds On (Max) @ Id, Vgs 8mOhm @ 7A, 4.5V
- Supplier Device Package Power Micro Foot® (2.4x2)
- Package / Case 30-XFBGA
