FQB27N25TM-F085
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SIHB12N50C-E3
Part Number：
SIHB12N50C-E3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 500V 12A D2PAK
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drain to Source Voltage (Vdss) 500 V
- Power Dissipation (Max) 208W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 25 V
- Rds On (Max) @ Id, Vgs 555mOhm @ 4A, 10V
