FQB27N25TM-F085
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SIHU7N60E-E3
Part Number：
SIHU7N60E-E3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 600V 7A TO251
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
- Supplier Device Package TO-251AA
- Power Dissipation (Max) 78W (Tc)
- Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
