FQB27N25TM-F085
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SQ2310ES-T1_GE3
Part Number：
SQ2310ES-T1_GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 20V 6A TO236
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 175°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package SOT-23-3 (TO-236)
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Power Dissipation (Max) 2W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
- Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 10 V
